Title :
An induced base hot-electron transistor
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
4/1/1985 12:00:00 AM
Abstract :
A novel three-terminal device is proposed in which the base represents an undoped quantum well in a graded-gap heterostructure. The base conductivity is provided by a two-dimensional electron gas induced by the collector field. The intrinsic delay time is estimated to be about 1 ps at room temperature with a common-base current gain close to unity.
Keywords :
Current density; Delay effects; Delay estimation; Electron emission; Electrooptic effects; FETs; Gallium arsenide; Reflection; Scattering;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26088
