DocumentCode
1104774
Title
An induced base hot-electron transistor
Author
Luryi, S.
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ
Volume
6
Issue
4
fYear
1985
fDate
4/1/1985 12:00:00 AM
Firstpage
178
Lastpage
180
Abstract
A novel three-terminal device is proposed in which the base represents an undoped quantum well in a graded-gap heterostructure. The base conductivity is provided by a two-dimensional electron gas induced by the collector field. The intrinsic delay time is estimated to be about 1 ps at room temperature with a common-base current gain close to unity.
Keywords
Current density; Delay effects; Delay estimation; Electron emission; Electrooptic effects; FETs; Gallium arsenide; Reflection; Scattering;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26088
Filename
1485241
Link To Document