Title :
Theory of electron impact ionization including a potential step: Application to GaAs-AlGaAs
Author :
Brennan, K. ; Wang, T. ; Hess, K.
Author_Institution :
Georgia Institute of Technology, Atlanta, GA, USA
fDate :
4/1/1985 12:00:00 AM
Abstract :
A Monte Carlo simulation of the electron impact ionization enhancement by a Kronig-Penney superlattice is presented. The results are compared to measured ionization coefficients of a GaAs/AlGaAs superlattice structure. The theory confirms the predicted and measured enhancement of the electron ionization rate. A quantitative fit of the theoretical data to the experimental results suggests a conduction-band offset in the GaAs/AlGaAs system which is roughly equal to 75 percent.
Keywords :
Avalanche photodiodes; Charge carrier processes; Conducting materials; Electrons; Gallium arsenide; Impact ionization; Noise reduction; Photonic band gap; Potential energy; Superlattices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26095
