• DocumentCode
    1104846
  • Title

    Theory of electron impact ionization including a potential step: Application to GaAs-AlGaAs

  • Author

    Brennan, K. ; Wang, T. ; Hess, K.

  • Author_Institution
    Georgia Institute of Technology, Atlanta, GA, USA
  • Volume
    6
  • Issue
    4
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    199
  • Lastpage
    201
  • Abstract
    A Monte Carlo simulation of the electron impact ionization enhancement by a Kronig-Penney superlattice is presented. The results are compared to measured ionization coefficients of a GaAs/AlGaAs superlattice structure. The theory confirms the predicted and measured enhancement of the electron ionization rate. A quantitative fit of the theoretical data to the experimental results suggests a conduction-band offset in the GaAs/AlGaAs system which is roughly equal to 75 percent.
  • Keywords
    Avalanche photodiodes; Charge carrier processes; Conducting materials; Electrons; Gallium arsenide; Impact ionization; Noise reduction; Photonic band gap; Potential energy; Superlattices;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26095
  • Filename
    1485248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104846