DocumentCode
1104904
Title
Modeling the turn-off characteristics of the bipolar-MOS transistor
Author
Kuo, D.-S. ; Choi, J.Y. ; Giandomenico, D. ; Hu, C. ; Sapp, S.P. ; Sassaman, K.A. ; Bregar, R.
Author_Institution
University of California, Berkeley, CA
Volume
6
Issue
5
fYear
1985
fDate
5/1/1985 12:00:00 AM
Firstpage
211
Lastpage
214
Abstract
Since the turn-off speed of the new bipolar-MOS power transistor is slow compared to that of a MOSFET, it is important to understand the limiting mechanism and the prospect for future improvement. In this letter, it is demonstrated that the turnoff waveform can be explained by a model based on a simple equivalent circuit and the transistor open-base turn-off process. The model is applied to explore the impact of some process modifications on speed improvement and to study the tradeoff between speed and on-resistance.
Keywords
Cameras; Electrodes; Equivalent circuits; Helium; Impedance; Instruments; MOSFET circuits; Power MOSFET; Power transistors; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26101
Filename
1485254
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