Title :
Modeling the turn-off characteristics of the bipolar-MOS transistor
Author :
Kuo, D.-S. ; Choi, J.Y. ; Giandomenico, D. ; Hu, C. ; Sapp, S.P. ; Sassaman, K.A. ; Bregar, R.
Author_Institution :
University of California, Berkeley, CA
fDate :
5/1/1985 12:00:00 AM
Abstract :
Since the turn-off speed of the new bipolar-MOS power transistor is slow compared to that of a MOSFET, it is important to understand the limiting mechanism and the prospect for future improvement. In this letter, it is demonstrated that the turnoff waveform can be explained by a model based on a simple equivalent circuit and the transistor open-base turn-off process. The model is applied to explore the impact of some process modifications on speed improvement and to study the tradeoff between speed and on-resistance.
Keywords :
Cameras; Electrodes; Equivalent circuits; Helium; Impedance; Instruments; MOSFET circuits; Power MOSFET; Power transistors; Spontaneous emission;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26101
