Title :
Noise Equivalent Circuit Model of Thin Avalanche Photodiodes
Author :
Akbari, Mohammad Hossein ; Jalali, Mohammad
Author_Institution :
Sch. of Eng., Shahed Univ., Tehran, Iran
Abstract :
In this letter, a circuit model of noise is presented for thin avalanche photodiodes. By defining an effective electric field over the multiplication region and using position-dependent ionization coefficients, the model tries to include the effects of carrier´s dead space and previous ionization history. Then, using a predicted multiplication gain, the model obtains the photocurrent response and output noise spectrum. The excess noise factor and spectral signal-to-noise ratio obtained from the proposed model are compared with available experimental data for different widths of multiplication region. The model is suitable for sensitivity and gain-bandwidth analysis.
Keywords :
avalanche photodiodes; equivalent circuits; ionisation; optical noise; carrier dead space; effective electric field; excess noise factor; gain-bandwidth analysis; ionization history; multiplication region; noise equivalent circuit model; output noise spectrum; photocurrent response; position-dependent ionization coefficients; predicted multiplication gain; sensitivity analysis; spectral signal-to-noise ratio; thin avalanche photodiodes; Avalanche photodiodes; Charge carrier processes; History; Integrated circuit modeling; Ionization; Signal to noise ratio; Avalanche photodiode; dead space effect; excess noise factor; multiplication gain; signal-to-noise ratio; signal-to-noise ratio.;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2319207
