Gate-bias-dependent low-frequency oscillations in GaAs MISFET´s

Low-frequency oscillations at 4-100 Hz have been observed in GaAs MISFET´s. The amplitude and initiation of the oscillations have been found to depend on the gate bias. The frequency of oscillations is also temperature-dependent. When this temperature dependence is plotted on an Arrhenius-type graph, an activation energy of 0.8 eV is obtained with a time constant of about 1 s at room temperature.