DocumentCode :
1104995
Title :
A circuit for reducing on-resistance of a p-n-p-n device at low currents
Author :
Ohno, T. ; Inabe, Y. ; Sakurai, T. ; Izumi, K.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
Volume :
6
Issue :
5
fYear :
1985
fDate :
5/1/1985 12:00:00 AM
Firstpage :
241
Lastpage :
243
Abstract :
This letter proposes a useful circuit which can reduce the on-resistance of a p-n-p-n device. This circuit is contrived from experimental results showing that the on-resistance decreases as the value of a resistor inserted between the gate and cathode terminals decreases. The basic operation and features of this circuit are discussed and its usefulness is verified experimentally. The p-n-p-n device having the circuit described here shows significant reduction in the on-resistance at the low forward-current region without degradation of characteristics such as gate triggering. This p-n-p-n device is useful for subscriber line interface circuits which need low on-resistance especially at low current levels.
Keywords :
Artificial intelligence; Bipolar transistors; Cathodes; Circuits; Current supplies; Current-voltage characteristics; Degradation; Dielectric devices; Resistors; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26111
Filename :
1485264
Link To Document :
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