DocumentCode :
1105098
Title :
Detection of oxygen concentration in silicon wafers using a tunable diode laser
Author :
Lo, Wayne ; Majkowski, Richard F.
Author_Institution :
Research Laboratories, General Motors Corporation, Warren, MI
Volume :
21
Issue :
4
fYear :
1985
fDate :
4/1/1985 12:00:00 AM
Firstpage :
395
Lastpage :
399
Abstract :
Control of the oxygen concentration in silicon wafers is important for the fabrication of high quality integrated circuits. Techniques for the fast detection of oxygen would be desirable for production line quality control. The oxygen concentration in silicon has traditionally been measured by a Fourier transform infrared spectrometer (FTIS). Due to the slow response time (1-10 min), it is not suitable for wafer screening. In this report, we describe a diode laser spectroscopy technique for the fast (10 ms) detection of oxygen in production line silicon wafers. The results are in good agreement with those measured by the Fourier transform technique.
Keywords :
Infrared spectroscopy; Laser applications; Materials processing; Process control; Semiconductor materials measurements; Diode lasers; Fourier transforms; Infrared spectra; Integrated circuit measurements; Optical device fabrication; Production; Quality control; Silicon; Spectroscopy; Tunable circuits and devices;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072659
Filename :
1072659
Link To Document :
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