Title :
A new method for calculating the noise parameters of MESFET´s and TEGFET´s
Author :
Cappy, A. ; Schortgen, M. ; Salmer, G.
Author_Institution :
C.N.R.S., Villeneuve D´´Ascq Cedex, France
fDate :
6/1/1985 12:00:00 AM
Abstract :
Analytical formulas for the intrinsic noise sources of both MESFET´s and TEGFET´s are derived from a numerical noise modeling. Using these expressions the calculated noise figure is in good agreement with experimental findings. The influence of gd and Cgd on the noise figure is then pointed out and a comparison between the kf factor of MESFET´s and TEGFET´s is presented.
Keywords :
Circuit noise; HEMTs; Impedance; MESFETs; MODFETs; Millimeter wave technology; Noise figure; Numerical models; Semiconductor device noise; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26122
