Title :
Effect of lateral curvature on the breakdown voltage of planar diodes
Author :
Basavanagoud, C. ; Bhat, K.N.
Author_Institution :
Indian Institute of Technology, Madras, India
fDate :
6/1/1985 12:00:00 AM
Abstract :
The effect of lateral radius of curvature on the breakdown voltage of planar diodes is investigated. It is shown that, this effect should be incorporated while estimating the breakdown voltage in most of the situations, especially in power integrated circuits.
Keywords :
Breakdown voltage; Diodes; Doping; Electric breakdown; Ionization; Laboratories; Lapping; Niobium; Performance analysis; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26124
