• DocumentCode
    1105129
  • Title

    Effect of lateral curvature on the breakdown voltage of planar diodes

  • Author

    Basavanagoud, C. ; Bhat, K.N.

  • Author_Institution
    Indian Institute of Technology, Madras, India
  • Volume
    6
  • Issue
    6
  • fYear
    1985
  • fDate
    6/1/1985 12:00:00 AM
  • Firstpage
    276
  • Lastpage
    278
  • Abstract
    The effect of lateral radius of curvature on the breakdown voltage of planar diodes is investigated. It is shown that, this effect should be incorporated while estimating the breakdown voltage in most of the situations, especially in power integrated circuits.
  • Keywords
    Breakdown voltage; Diodes; Doping; Electric breakdown; Ionization; Laboratories; Lapping; Niobium; Performance analysis; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26124
  • Filename
    1485277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105129