• DocumentCode
    1105184
  • Title

    Extreme Ultraviolet Plasma Source For Future Lithography

  • Author

    Wagenaars, Erik ; Mader, Arnaud ; Bergmann, Klaus ; Jonkers, Jeroen ; Neff, Willi

  • Author_Institution
    Laser Technol., Aachen Univ., Aachen
  • Volume
    36
  • Issue
    4
  • fYear
    2008
  • Firstpage
    1280
  • Lastpage
    1281
  • Abstract
    An extreme ultraviolet (EUV) plasma source intended for future lithography applications is presented. The plasma source efficiently emits EUV light around 13.5 nm with 2% bandwidth. Debris mitigation and collector systems are successfully implemented to achieve a focused beam of debris-free EUV photons that can be used in EUV lithography.
  • Keywords
    discharges (electric); pinch effect; plasma materials processing; plasma sources; ultraviolet lithography; EUV lithography; collector systems; debris mitigation; debris-free EUV photons; extreme ultraviolet plasma source; gas discharges; plasma pinch; wavelength 13.5 nm; Extreme ultraviolet; gas discharges; lithography; plasma pinch;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2008.917780
  • Filename
    4472854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105184