Title :
Scaling of Data Retention Statistics in Phase-Change Random Access Memory
Author :
Yongwoo Kwon ; Byoungnam Park ; Dae-Hwan Kang
Author_Institution :
Dept. of Mater. Sci. & Eng., Hongik Univ., Seoul, South Korea
Abstract :
A scaling law on data retention statistics is presented for sub-20-nm phase-change random access memory with a confined cell structure. Nucleation and growth was modeled with phase-field method. Universality encompassing cell size, temperature, and active phase-change material was found.
Keywords :
phase change materials; phase change memories; statistical analysis; active phase-change material; confined cell structure; data retention statistic scaling; phase-change random access memory; phase-field method; Crystallization; Kinetic theory; Phase change random access memory; Temperature dependence; Phase-change random access memory (PC-RAM); data retention; modeling; phase-change random access memory (PCRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2414952
