Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction

Author

Stavitski, Natalie ; Van Dal, Mark J H ; Lauwers, Anne ; Vrancken, Christa ; Kovalgin, Alexey Y. ; Wolters, Rob A M

Author_Institution

Univ. of Twente, Enschede

Volume

55

Issue

5

fYear

2008

fDate

5/1/2008 12:00:00 AM

Firstpage

1170

Lastpage

1176

Abstract

In order to measure silicide-to-silicon specific contact resistance rho_c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.

Keywords

contact resistance; nickel compounds; platinum compounds; semiconductor doping; silicon compounds; CMOS processes; doping levels; nickel silicide; platinum silicide; silicide-to-silicon specific contact resistance extraction; transmission line model structures; CMOS process; Contact resistance; Electrical resistance measurement; Nickel; Platinum; Semiconductor device modeling; Semiconductor process modeling; Silicides; Transmission line measurements; Transmission lines; Nickel silicide (NiSi); platinum silicide (PtSi); silicide; specific contact resistance; transmission line model (TLM);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.918658

Filename

4472856