Title :
Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction
Author :
Stavitski, Natalie ; Van Dal, Mark J H ; Lauwers, Anne ; Vrancken, Christa ; Kovalgin, Alexey Y. ; Wolters, Rob A M
Author_Institution :
Univ. of Twente, Enschede
fDate :
5/1/2008 12:00:00 AM
Abstract :
In order to measure silicide-to-silicon specific contact resistance rhoc, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.
Keywords :
contact resistance; nickel compounds; platinum compounds; semiconductor doping; silicon compounds; CMOS processes; doping levels; nickel silicide; platinum silicide; silicide-to-silicon specific contact resistance extraction; transmission line model structures; CMOS process; Contact resistance; Electrical resistance measurement; Nickel; Platinum; Semiconductor device modeling; Semiconductor process modeling; Silicides; Transmission line measurements; Transmission lines; Nickel silicide (NiSi); platinum silicide (PtSi); silicide; specific contact resistance; transmission line model (TLM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.918658
