Title :
Low-noise operation in buried-channel MOSFET´s
Author_Institution :
Sharp Corporation, Tenri, Nara, Japan
fDate :
7/1/1985 12:00:00 AM
Abstract :
Noise measurements in buried-channel MOSFET´s are presented on various operating conditions. A new noise source has been observed in the weak inversion regime of the MOSFET´s. By avoiding this noise source and other known noise sources in buried-channel devices, a good noise performance of MOS analog circuits has been obtained.
Keywords :
Circuit noise; Driver circuits; Impact ionization; Inverters; Kirchhoff´s Law; MOSFET circuits; Neodymium; Noise measurement; Resistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26140
