DocumentCode
1105286
Title
Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers
Author
Asada, Masahiro ; Suematsu, Yasuharu
Author_Institution
Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
Volume
21
Issue
5
fYear
1985
fDate
5/1/1985 12:00:00 AM
Firstpage
434
Lastpage
442
Abstract
The density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments. The dipole moment is given theoretically by the
method and is calculated for various semiconductor materials. As a result, gain and gain-suppression for a variety of crystals covering wide wavelength region are calculated. It is found that the linear gain is larger for longer wavelength lasers and that the gain-suppression is much larger for longer wavelength lasers, which results in that single-mode operation is more stable in long-wavelength lasers than in shorter-wavelength lasers, in good agreement with the experiments.
method and is calculated for various semiconductor materials. As a result, gain and gain-suppression for a variety of crystals covering wide wavelength region are calculated. It is found that the linear gain is larger for longer wavelength lasers and that the gain-suppression is much larger for longer wavelength lasers, which results in that single-mode operation is more stable in long-wavelength lasers than in shorter-wavelength lasers, in good agreement with the experiments.Keywords
Semiconductor lasers; Conducting materials; Gain; Gallium arsenide; Indium phosphide; Laser modes; Laser stability; Laser theory; Semiconductor lasers; Semiconductor materials; Tail;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072674
Filename
1072674
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