• DocumentCode
    1105286
  • Title

    Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers

  • Author

    Asada, Masahiro ; Suematsu, Yasuharu

  • Author_Institution
    Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    434
  • Lastpage
    442
  • Abstract
    The density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments. The dipole moment is given theoretically by the k . p method and is calculated for various semiconductor materials. As a result, gain and gain-suppression for a variety of crystals covering wide wavelength region are calculated. It is found that the linear gain is larger for longer wavelength lasers and that the gain-suppression is much larger for longer wavelength lasers, which results in that single-mode operation is more stable in long-wavelength lasers than in shorter-wavelength lasers, in good agreement with the experiments.
  • Keywords
    Semiconductor lasers; Conducting materials; Gain; Gallium arsenide; Indium phosphide; Laser modes; Laser stability; Laser theory; Semiconductor lasers; Semiconductor materials; Tail;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072674
  • Filename
    1072674