DocumentCode :
1105286
Title :
Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers
Author :
Asada, Masahiro ; Suematsu, Yasuharu
Author_Institution :
Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
Volume :
21
Issue :
5
fYear :
1985
fDate :
5/1/1985 12:00:00 AM
Firstpage :
434
Lastpage :
442
Abstract :
The density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments. The dipole moment is given theoretically by the k . p method and is calculated for various semiconductor materials. As a result, gain and gain-suppression for a variety of crystals covering wide wavelength region are calculated. It is found that the linear gain is larger for longer wavelength lasers and that the gain-suppression is much larger for longer wavelength lasers, which results in that single-mode operation is more stable in long-wavelength lasers than in shorter-wavelength lasers, in good agreement with the experiments.
Keywords :
Semiconductor lasers; Conducting materials; Gain; Gallium arsenide; Indium phosphide; Laser modes; Laser stability; Laser theory; Semiconductor lasers; Semiconductor materials; Tail;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072674
Filename :
1072674
Link To Document :
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