Title :
Short-channel effects in MOSFET´s
Author :
Pearce, C.W. ; Yaney, D.S.
fDate :
7/1/1985 12:00:00 AM
Abstract :
In this letter we present electrical measurements of threshold voltage on matched transistor pairs which show a channel shortening effect due to the presence of dislocations or metallic precipitates in the device. Such effects could present a limitation on the yield and performance of MOS integrated circuits employing short-channel devices.
Keywords :
Electric breakdown; MOS devices; MOSFETs; Optical devices; Pollution measurement; Silicon; Surface contamination; Surface emitting lasers; Surface treatment; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26143
