DocumentCode
1105308
Title
Short-channel effects in MOSFET´s
Author
Pearce, C.W. ; Yaney, D.S.
Volume
6
Issue
7
fYear
1985
fDate
7/1/1985 12:00:00 AM
Firstpage
326
Lastpage
328
Abstract
In this letter we present electrical measurements of threshold voltage on matched transistor pairs which show a channel shortening effect due to the presence of dislocations or metallic precipitates in the device. Such effects could present a limitation on the yield and performance of MOS integrated circuits employing short-channel devices.
Keywords
Electric breakdown; MOS devices; MOSFETs; Optical devices; Pollution measurement; Silicon; Surface contamination; Surface emitting lasers; Surface treatment; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26143
Filename
1485296
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