DocumentCode :
1105370
Title :
Switching in NERFET circuits
Author :
Kastalsky, A. ; Luryi, S. ; Gossard, A.C. ; Chan, W.K.
Author_Institution :
Bell Communications Research, Murray Hill, NJ, USA
Volume :
6
Issue :
7
fYear :
1985
fDate :
7/1/1985 12:00:00 AM
Firstpage :
347
Lastpage :
349
Abstract :
NERFET is a three-terminal device possessing a pronounced negative differential resistance due to the effect of real-space hot-electron transfer. The device structure, substantially modified compared to our earlier reports, gives an improved performance at room temperature. In this work, logic operation of a circuit formed by two NERFET´s is demonstrated for the first time. Sharp switching of output voltage is observed. Using this circuit, we have demonstrated the operation of an inverter and a bistable switch. Under certain bias configurations the circuit also exhibits a tristable behavior which can be used for ternary logic.
Keywords :
Electrodes; Gallium arsenide; Inverters; Logic circuits; Logic devices; Superlattices; Switches; Switching circuits; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26150
Filename :
1485303
Link To Document :
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