• DocumentCode
    1105437
  • Title

    Effect of final annealing on hot-electron-induced MOSFET degradation

  • Author

    Hsu, F.-C. ; Hui, S. ; Chiu, K.Y.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, CA, USA
  • Volume
    6
  • Issue
    7
  • fYear
    1985
  • fDate
    7/1/1985 12:00:00 AM
  • Firstpage
    369
  • Lastpage
    371
  • Abstract
    The effect of the post metallization final annealing step on hot-electron-induced device degradation in MOSFET´s with various drain/source structures has been studied. It is shown that the hydrogen ambient during the final annealing enhances the hot-electron-induced degradation rate. By performing the final annealing in the nitrogen ambient, the device reliability can be significantly improved without sacrificing any of the device performances.
  • Keywords
    Annealing; Degradation; Doping profiles; Hydrogen; Interface states; MOSFET circuits; Metallization; Nitrogen; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26157
  • Filename
    1485310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105437