DocumentCode
1105447
Title
Effect of selective tungsten as a polysilicon shunt on CMOS ring-oscillator performance
Author
Metz, W.A. ; Szluk, N.J. ; Miller, G.W. ; Hayworth, H.O.
Author_Institution
NCR Corporation, Fort Collins, CO
Volume
6
Issue
7
fYear
1985
fDate
7/1/1985 12:00:00 AM
Firstpage
372
Lastpage
374
Abstract
Selective tungsten is applied as a polysilicon shunt to CMOS ring oscillators specifically designed to be interconnect limited. The tungsten shunted ring oscillators operate at a frequency almost twice that of nonshunted oscillators. Shunting of source/drains as well as gates leads to further performance enhancements. Similar improvements are demonstrated for VLSI circuits.
Keywords
CMOS technology; Circuit optimization; Fabrication; Frequency; Histograms; Integrated circuit interconnections; Production; Ring oscillators; Silicon; Tungsten;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26158
Filename
1485311
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