Effect of selective tungsten as a polysilicon shunt on CMOS ring-oscillator performance

Selective tungsten is applied as a polysilicon shunt to CMOS ring oscillators specifically designed to be interconnect limited. The tungsten shunted ring oscillators operate at a frequency almost twice that of nonshunted oscillators. Shunting of source/drains as well as gates leads to further performance enhancements. Similar improvements are demonstrated for VLSI circuits.