Comments on "Isotope effects in MNOS transistors"

In reading the above mentioned letter, the author presents material which is suppose to verify that silicon to hydrogen or silicon to deuterium bonds are responsible for charge trapping in MNOS nonviolate memory devices. In his discussions of the experimental results, he has failed to address other work in the literature which attribute different properties to the silicon hydrogen bond in silicon nitride. These comments will discuss other works in the literature dealing with hydrogen in silicon nitride and its influence on the charge-trapping mechanism.