Title :
600- and 1200-V bipolar-mode MOSFET´s with high current capability
Author :
Nakagawa, A. ; Ohashi, H.
Author_Institution :
Toshiba Research and Development Center, Kawasaki, Japan
fDate :
7/1/1985 12:00:00 AM
Abstract :
600-V 25-A and 1200-V 20-A bipolar-mode MOSFET´s (T-BIFET) with 100-A and 75-A maximum current capability, respectively, have been developed, based on a new pattern design theory for high latch-up current density. It is also shown than an n+-buffer layer improves a tradeoff between the forward voltage and the turn-off time, compared with an ordinary n-buffer layer.
Keywords :
Charge carrier processes; Controllability; Current density; Electrodes; MOSFET circuits; Numerical simulation; Power MOSFET; Research and development; Thyristors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26161
