DocumentCode
1105494
Title
High-quality GaAs MESFET´s grown on Silicon substrates by molecular-beam epitaxy
Author
Morkoç, H. ; Peng, C.K. ; Henderson, T. ; Kopp, W. ; Fischer, R. ; Erickson, L.P. ; Longerbone, M.D. ; Youngman, R.C. ; Longerbone, M.D. ; Youngman, R.C.
Author_Institution
University of Illinois, Urbana, IL
Volume
6
Issue
7
fYear
1985
fDate
7/1/1985 12:00:00 AM
Firstpage
381
Lastpage
383
Abstract
High-quality epitaxial films of 2.3-µm-thick GaAs were grown on 3-in-diam
Keywords
Coatings; Doping; Electron mobility; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Semiconductor films; Silicon; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26162
Filename
1485315
Link To Document