Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers

Author

Belenky, Gregory L. ; Reynolds, C.L., Jr. ; Kazarinov, R.F. ; Swaminathan, V. ; Luryi, Serge L. ; Lopata, John

Author_Institution

State Univ. of New York, Stony Brook, NY, USA

Volume

32

Issue

8

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

1450

Lastpage

1455

Abstract

Leakage of electrons from the active region of InGaAsP-InP laser heterostructures with different profiles of acceptor doping was measured by a purely electrical technique together with the device threshold current. Comparison of the obtained results with modeling data and SIMS analysis shows that carrier leakage of electrons over the heterobarrier depends strongly on the profile of p-doping and level of injection. In the case of a structure with an undoped p-cladding/waveguide interface, the value of electron leakage current can reach 20% of the total pumping current at an injection current density of 10 kA/cm at 50°C. It is shown that carrier leakage in InGaAsP-InP multi-quantum-well lasers can be minimized and the device performance improved by utilizing a p-doped separate-confinement-heterostructure layer

Keywords

III-V semiconductors; current density; doping profiles; gallium arsenide; indium compounds; leakage currents; quantum well lasers; secondary ion mass spectra; semiconductor doping; 50 degC; InGaAsP-InP; InGaAsP-InP laser heterostructures; SIMS analysis; acceptor doping; active region; carrier leakage; device performance; device threshold current; electrical technique; electron leakage; electron leakage current; heterobarrier; injection current density; injection level; modeling data; p-doped separate-confinement-heterostructure layer; p-doping; p-doping profile; performance; strained multi-quantum-well InGaAsP-InP lasers; total pumping current; undoped p-cladding/waveguide interface; Current density; Current measurement; Data analysis; Doping profiles; Electric variables measurement; Electrons; Laser modes; Leakage current; Semiconductor process modeling; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.511558

Filename

511558