• DocumentCode
    1105573
  • Title

    Vertical bipolar transistors in laser-recrystallized polysilicon

  • Author

    Sturm, J.C. ; Gibbons, J.F.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    6
  • Issue
    8
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    400
  • Lastpage
    402
  • Abstract
    Vertical bipolar n-p-n transistors with a base width of 0.2 µm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current.
  • Keywords
    Annealing; Bipolar transistors; Etching; Gas lasers; Laser beams; Laser theory; MOSFETs; Metallization; Semiconductor films; Silicon on insulator technology;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26169
  • Filename
    1485322
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105573