DocumentCode :
1105575
Title :
1.3 µm buried heterojunction laser diodes under high electrical stress: Leakage currents and aging behavior
Author :
Kuindersma, P.I. ; Valster, Adriaan ; Baks, Wouter
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Volume :
21
Issue :
6
fYear :
1985
fDate :
6/1/1985 12:00:00 AM
Firstpage :
726
Lastpage :
736
Abstract :
Investigations on 1.3 μm DCPBH laser diodes under high electrical stress are reported. Leakage currents are identified by electro-and photoluminescence. Experiments on laser diodes with additional collector contacts to the n-InP floating layer show that blocking layer leakage is strongly enhanced by transistor action. The observed aging behavior is described. Excellent stability is observed for our diodes, more so after stress testing. It is found that stress test aging of diodes from moderate quality wafers, which typically still strongly levels off in time, is not caused by an increase in leakage current via the blocking layers, but by an increased leakage in and/or around the mesa. Though transistor action has a strong influence on device performance at high currents, thyristor breakover is shown to be absent in DCPBH-diodes: primarily due to lateral conduction in the blocking layers. Experimentally, thyristor breakover could be obtained by restricting the lateral conduction to about the channel width or less.
Keywords :
Gallium materials/lasers; Laser thermal factors; Life estimation; Aging; Contacts; Diode lasers; Heterojunctions; Leakage current; Photoluminescence; Stability; Stress; Testing; Thyristors;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072702
Filename :
1072702
Link To Document :
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