Title :
Monte Carlo simulation of electron transport efficiency of an InGaAs/InP hot-electron transistor
Author :
Ohnishi, H. ; Yokoyama, N. ; Nishi, H.
Author_Institution :
Fujitsu Limited, Atsugi, Japan
fDate :
8/1/1985 12:00:00 AM
Abstract :
Electron transport efficiency of an InGaAs/InP hot-electron transistor (HET) is determined by a Monte Carlo method including alloy scattering in an InGaAs base. Results are compared with those of a GaAs/AlGaAs HET. It is found that the InGaAs/InP HET offers a higher current gain than that of a GaAs/AlGaAs HET by an order of magnitude.
Keywords :
Electrons; Equations; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; Kinetic energy; Optical scattering; Phonons; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26170
