DocumentCode :
1105592
Title :
Silicon point contact concentrator solar cells
Author :
Sinton, R.A. ; Kwark, Y. ; Swirhun, S. ; Swanson, R.M.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
Volume :
6
Issue :
8
fYear :
1985
fDate :
8/1/1985 12:00:00 AM
Firstpage :
405
Lastpage :
407
Abstract :
Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 µm thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/cm2(30-300 "suns"). Efficiency peaked at 23 percent at 11 W/cm2measured at 22-25°C. Strategies for obtaining higher efficiencies with this solar cell design are discussed.
Keywords :
Annealing; Charge carrier density; Conductivity; Design optimization; Metallization; Photovoltaic cells; Radiative recombination; Silicon; Spontaneous emission; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26171
Filename :
1485324
Link To Document :
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