DocumentCode :
1105603
Title :
Unframed contacts using refractory metals
Author :
Brown, D. ; Gorowitz, B. ; Wilson, R. ; Stoll, B. ; Saia, R.
Author_Institution :
General Electric Research and Development Center, Schenectady, NY
Volume :
6
Issue :
8
fYear :
1985
fDate :
8/1/1985 12:00:00 AM
Firstpage :
408
Lastpage :
409
Abstract :
Unframed contacts are extremely useful for high density integrated circuits because they decrease the metal interconnection line pitch in contrast to framed vias where the metal frames around the vias or contact openings require a minimum design rule spacing between the frame edges and adjacent lines. A method is described for making unframed or nonoverlapping metal contacts to silicon junction regions using selective CVD tungsten films for contacts and molybdenum for interconnections.
Keywords :
Contact resistance; Diodes; Hydrogen; Integrated circuit interconnections; Metallization; Resists; Semiconductor films; Silicon; Sputter etching; Tungsten;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26172
Filename :
1485325
Link To Document :
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