• DocumentCode
    1105603
  • Title

    Unframed contacts using refractory metals

  • Author

    Brown, D. ; Gorowitz, B. ; Wilson, R. ; Stoll, B. ; Saia, R.

  • Author_Institution
    General Electric Research and Development Center, Schenectady, NY
  • Volume
    6
  • Issue
    8
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    408
  • Lastpage
    409
  • Abstract
    Unframed contacts are extremely useful for high density integrated circuits because they decrease the metal interconnection line pitch in contrast to framed vias where the metal frames around the vias or contact openings require a minimum design rule spacing between the frame edges and adjacent lines. A method is described for making unframed or nonoverlapping metal contacts to silicon junction regions using selective CVD tungsten films for contacts and molybdenum for interconnections.
  • Keywords
    Contact resistance; Diodes; Hydrogen; Integrated circuit interconnections; Metallization; Resists; Semiconductor films; Silicon; Sputter etching; Tungsten;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26172
  • Filename
    1485325