DocumentCode
1105603
Title
Unframed contacts using refractory metals
Author
Brown, D. ; Gorowitz, B. ; Wilson, R. ; Stoll, B. ; Saia, R.
Author_Institution
General Electric Research and Development Center, Schenectady, NY
Volume
6
Issue
8
fYear
1985
fDate
8/1/1985 12:00:00 AM
Firstpage
408
Lastpage
409
Abstract
Unframed contacts are extremely useful for high density integrated circuits because they decrease the metal interconnection line pitch in contrast to framed vias where the metal frames around the vias or contact openings require a minimum design rule spacing between the frame edges and adjacent lines. A method is described for making unframed or nonoverlapping metal contacts to silicon junction regions using selective CVD tungsten films for contacts and molybdenum for interconnections.
Keywords
Contact resistance; Diodes; Hydrogen; Integrated circuit interconnections; Metallization; Resists; Semiconductor films; Silicon; Sputter etching; Tungsten;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26172
Filename
1485325
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