• DocumentCode
    1105633
  • Title

    Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD

  • Author

    Razeghi, Maniyeh ; Blondeau, Robert ; Krakowski, Michel ; Bouley, Jean-Claude ; Papuchon, Michel ; Cremoux, B. ; Duchemin, J.P.

  • Author_Institution
    Laboratoire Central de Recherches, Thomson-CSF, Orsay Cedex, France
  • Volume
    21
  • Issue
    6
  • fYear
    1985
  • fDate
    6/1/1985 12:00:00 AM
  • Firstpage
    507
  • Lastpage
    511
  • Abstract
    GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 μm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW per facet at room temperature have been obtained. The lasing wavelength λLunder CW operation showed a temperature coefficient ( d_{\\lambda L}/dT ) of 0.9 Å/°C for this DFB laser over the range of 10-90\\deg C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.
  • Keywords
    Distributed feedback (DFB) lasers; Gallium materials/lasers; Semiconductor growth; Chemical lasers; Chemical vapor deposition; Distributed feedback devices; Inorganic materials; Laser feedback; Optical materials; Power generation; Pulse modulation; Pulsed laser deposition; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072707
  • Filename
    1072707
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105633