DocumentCode :
1105633
Title :
Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD
Author :
Razeghi, Maniyeh ; Blondeau, Robert ; Krakowski, Michel ; Bouley, Jean-Claude ; Papuchon, Michel ; Cremoux, B. ; Duchemin, J.P.
Author_Institution :
Laboratoire Central de Recherches, Thomson-CSF, Orsay Cedex, France
Volume :
21
Issue :
6
fYear :
1985
fDate :
6/1/1985 12:00:00 AM
Firstpage :
507
Lastpage :
511
Abstract :
GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 μm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW per facet at room temperature have been obtained. The lasing wavelength λL under CW operation showed a temperature coefficient ( 
) of 0.9 Å/°C for this DFB laser over the range of 
C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.
) of 0.9 Å/°C for this DFB laser over the range of C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.Keywords :
Distributed feedback (DFB) lasers; Gallium materials/lasers; Semiconductor growth; Chemical lasers; Chemical vapor deposition; Distributed feedback devices; Inorganic materials; Laser feedback; Optical materials; Power generation; Pulse modulation; Pulsed laser deposition; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072707
Filename :
1072707
Link To Document :
