DocumentCode :
1105654
Title :
Performance predictions from a new optical amplifier model
Author :
Henning, I.D. ; Adams, M.J. ; Collins, John V.
Author_Institution :
British Telecom Research Labs., Mantlesham Heath, Ipswich, England
Volume :
21
Issue :
6
fYear :
1985
fDate :
6/1/1985 12:00:00 AM
Firstpage :
609
Lastpage :
613
Abstract :
We present results of a new model of semiconductor laser amplifiers which differs from previous analyses in that it includes the spectral dependence of material gain and spontaneous emission. The implications of low facet reflectivities are explored in some detail. For reflectivities below about 1 percent, the increased spontaneous emission imposes more stringent limits on current density than realized hitherto. If thermal runaway is to be avoided and gains in the range of 20-30 dB are to be achieved without excessive currents, then facet reflectivities on the order of 0.1-1 percent are probably optimal. Another consequence of including the spectral dependence is that wavelengths longer than that corresponding to the unsaturated gain peak are predicted to experience enhanced amplification at high input powers by comparison to shorter wavelengths.
Keywords :
Laser amplifiers; Semiconductor lasers; Laser modes; Optical amplifiers; Optical materials; Predictive models; Reflectivity; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072709
Filename :
1072709
Link To Document :
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