Title :
AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiers
Author :
Saunier, Paul ; Tserng, Hua Quen
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
10/1/1989 12:00:00 AM
Abstract :
AlGaAs/InGaAs/GaAs-type heterostructure with one or two doped channels have been used to fabricate both discrete devices and monolithic amplifiers for millimeter-wave operation. Maximum current densities of 1 A/mm and maximum transconductances of 530 mS/mm were obtained. 0.25×50 μm discrete devices delivered a power density of 1 W/mm with 2.9-dB gain and 25% efficiency at 60 GHz. A 100-μm monolithic one-stage amplifier demonstrated 93 mW (0.93-W/mm power density) at 31.5 GHz with 4.2-dB gain and 29% efficiency. A record 34% efficiency was achieved with a 53.7-mW output power and 4.8-dB gain
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; solid-state microwave devices; 100 micron; 2.9 dB; 25 percent; 29 percent; 31.5 GHz; 34 percent; 4.2 dB; 4.8 dB; 53.7 mW; 530 mS; 60 GHz; 93 mW; AlGaAs-InGaAs-GaAs heterostructure; current densities; discrete devices; doped channels; efficiency; gain; millimeter-wave operation; monolithic amplifiers; output power; power density; transconductances; Buffer layers; Current density; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Operational amplifiers; Photonic band gap; Power amplifiers; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
