DocumentCode
1105673
Title
Temperature dependence of backgating effect in GaAs integrated circuits
Author
Lee, C.P. ; Chang, M.F.
Author_Institution
Rockwell International Corporation, Thousand Oaks, CA
Volume
6
Issue
8
fYear
1985
fDate
8/1/1985 12:00:00 AM
Firstpage
428
Lastpage
430
Abstract
The backgating effect in GaAs IC´s has been found to be temperature dependent. The threshold voltage for backgating increases with temperature, resulting in lower backgating at higher temperatures. The measured activation energy of the backgating threshold versus temperature is 83 meV, in agreement with the energy difference between the Fermi level and the EL2 level at the surface of semi-insulating GaAs.
Keywords
Circuits; Current measurement; Electrodes; Electron traps; FETs; Gallium arsenide; Leakage current; Temperature dependence; Temperature sensors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26179
Filename
1485332
Link To Document