Title :
A new model for modulation-doped FET´s
Author :
Çil, C.Z. ; Tansal, S.
Author_Institution :
Bogaziçi University, Istanbul
fDate :
8/1/1985 12:00:00 AM
Abstract :
A new study showing that Lehovec and Zuleeg analysis for silicon FET´s can be extended to the GaAs FET´s is presented. An analytical model that effectively predicts the characteristics of the MODFET is introduced. The agreement between the model and the experimental data appears to be very good.
Keywords :
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; Predictive models; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26181
