DocumentCode
1105698
Title
A new model for modulation-doped FET´s
Author
Çil, C.Z. ; Tansal, S.
Author_Institution
Bogaziçi University, Istanbul
Volume
6
Issue
8
fYear
1985
fDate
8/1/1985 12:00:00 AM
Firstpage
434
Lastpage
436
Abstract
A new study showing that Lehovec and Zuleeg analysis for silicon FET´s can be extended to the GaAs FET´s is presented. An analytical model that effectively predicts the characteristics of the MODFET is introduced. The agreement between the model and the experimental data appears to be very good.
Keywords
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; Predictive models; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26181
Filename
1485334
Link To Document