High-Responsivity Photodetector in Standard SiGe BiCMOS Technology

Author

Lai, Kuang-Sheng ; Huang, Ji-Chen ; Hsu, Klaus Y J

Author_Institution

Nat. Tsing Hua Univ., Hsinchu

Volume

28

Issue

9

fYear

2007

Firstpage

800

Lastpage

802

Abstract

For high-speed optoelectronic applications such as fiber-optic data communication systems, photodetectors (PDs) with high responsivity in Si-related processes are required. In this letter, a result of the effort along this line is reported. A novel device named phototransistor PD (PTPD) was realized in a commercial 0.35-mum SiGe BiCMOS technology. The device combines a surface PD (SPD) and a conventional SiGe heterojunction PT (HPT). It was shown that the SPD enhanced light absorption and the PTPD showed significant performance improvement over HPT. Responsivities of 5.2 A/W for an 850-nm light and 9.5 A/W for a 670-nm light were achieved in the PTPD, with floating base and SPD terminals.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; integrated optoelectronics; light absorption; photodetectors; BiCMOS technology; SiGe - Interface; enhanced light absorption; heterojunction phototransistor; high-responsivity photodetector; high-speed optoelectronic; phototransistor photodetector; size 0.35 mum; surface photodetector; wavelength 670 nm; wavelength 850 nm; Absorption; BiCMOS integrated circuits; Data communication; Germanium silicon alloys; Heterojunctions; Optical fiber communication; Optical fiber devices; Photodetectors; Phototransistors; Silicon germanium; Photodetector (PD); phototransistor (PT); responsivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.904337

Filename

4294059