• DocumentCode
    1105709
  • Title

    Use of a TiN barrier to improve GaAs FET ohmic contact reliability

  • Author

    Remba, R.D. ; Suni, I. ; Nicolet, M.A.

  • Author_Institution
    Watkins Johnson Co., Palo Alto, CA
  • Volume
    6
  • Issue
    8
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    437
  • Lastpage
    438
  • Abstract
    We have used a reactively sputtered TiN diffusion barrier to prevent interpenetration of a (Ni)GeAuPt ohmic contact layer and Ti/Pt/Au overlay on GaAs devices baked at 250-300°C in air. Planar GaAs MESFET´s and TLM patterns were fabricated and iteratively tested and baked. Devices without TiN showed severe degradation in morphology and dc and RF performance. Devices with TiN remained essentially unchanged.
  • Keywords
    Degradation; FETs; Gallium arsenide; Gold; MESFETs; Morphology; Ohmic contacts; Radio frequency; Testing; Tin;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26182
  • Filename
    1485335
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105709