Comparison of temperature models for the drain current of MESFET´s

Author

Tellez, J Rodriguez ; Stothard, B P ; Galvan, C.

Author_Institution

Dept. of Electr. & Electron. Eng., Bradford Univ., UK

Volume

15

Issue

8

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

968

Lastpage

976

Abstract

In this paper, the Curtice, Shoucair, Selmi, and Rodriguez nonlinear dc drain current thermal models for the GaAs MESFET device are compared to determine which best fulfills the nonlinear criteria. The comparison is performed using a variety of MESFET´s of varying gate-widths, pinch-off voltages, and number of fingers to assess the consistency of the models. The nonlinear criteria are assessed with the models applied under different bias and temperature conditions. The execution speed of the models is also assessed, since this is a significant feature from a circuit simulation point of view

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; Curtice model; GaAs; MESFET; Rodriguez model; Selmi model; Shoucair model; bias conditions; circuit simulation; execution speed; fingers; gate-widths; nonlinear dc drain current; pinch-off voltages; temperature conditions; temperature models; thermal models; Circuit simulation; Circuit synthesis; Fingers; Gallium arsenide; Heating; MESFETs; Temperature dependence; Temperature distribution; Transconductance; Voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.511576

Filename

511576