Enhanced Hole Mobility and Reliability of Panel Epi-Like Silicon Transistors Using Backside Green Laser Activation

The hole mobility and reliability of green continuous-wave laser-crystallized epi-like Si transistors on glass panel substrates were enhanced by source/drain activation by backside green laser irradiation. Green laser energy was scanned uniformly across junctions since the gate structures included no interference, in an attempt to conduct super visible-laser lateral activation. The enhancement was thus explained by the formation of continuous improved epi-like Si microstructures with reduced grain defects and with a barely increased number of interface defects over the entire channel/junction. The hole mobility in such laser-activated devices was as high as 403 cm² /V^.s, which doubles that of thermally activated devices.