DocumentCode
1105752
Title
A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors
Author
Delagebeaudeuf, D. ; Chevrier, J. ; Laviron, M. ; Delescluse, P.
Author_Institution
Thomson-CSF, Orsay, France
Volume
6
Issue
9
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
444
Lastpage
445
Abstract
In this letter, a new relationship is derived between the Fukui coefficient, appearing in the Fukui´s equation, and the optimal current for low-noise operation of field-effect devices. It´s validity has been evidenced by considering several experimental cases including MESFET´s, HEMT, and TEGFET´S.
Keywords
Bandwidth; Capacitance; Equations; FETs; Frequency estimation; HEMTs; Low-frequency noise; MESFETs; Optimized production technology; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26186
Filename
1485339
Link To Document