Title :
A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors
Author :
Delagebeaudeuf, D. ; Chevrier, J. ; Laviron, M. ; Delescluse, P.
Author_Institution :
Thomson-CSF, Orsay, France
fDate :
9/1/1985 12:00:00 AM
Abstract :
In this letter, a new relationship is derived between the Fukui coefficient, appearing in the Fukui´s equation, and the optimal current for low-noise operation of field-effect devices. It´s validity has been evidenced by considering several experimental cases including MESFET´s, HEMT, and TEGFET´S.
Keywords :
Bandwidth; Capacitance; Equations; FETs; Frequency estimation; HEMTs; Low-frequency noise; MESFETs; Optimized production technology; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26186
