High Mobility Strained Ge pMOSFETs With High-κ/Metal Gate

Author

Nicholas, Gareth ; Grasby, T.J. ; Fulgoni, D.J.F. ; Beer, C.S. ; Parsons, J. ; Meuris, M. ; Heyns, M.M.

Author_Institution

Interuniv. Microelectron. Centre, Leuven

Volume

28

Issue

9

fYear

2007

Firstpage

825

Lastpage

827

Abstract

Compressively strained Ge long channel ring-type pMOSFETs with high-kappa Si/SiO₂/HfO₂/TiN gate stacks are fabricated on Si_0.2Ge_0.8 virtual substrates. Effective oxide thickness is approximately 1.4 nm with low gate leakage current. A peak hole mobility of 640 cm²/ Vldrs and up to a four times enhancement over the Si/SiO₂ universal curve are observed. Parasitic conduction within the Si-cap layers degrades the mobility at large vertical fields, although up to a 2.5 times enhancement over universal remains at a field of 0.9 MV/cm.

Keywords

Ge-Si alloys; MOSFET; hafnium compounds; high-k dielectric thin films; hole mobility; leakage currents; silicon compounds; titanium compounds; Si-SiO₂-HfO₂-TiN - Interface; Si_0.2Ge_0.8 - Interface; high-k gate stacks; hole mobility; leakage current; long channel ring-type pMOSFET; low pressure chemical vapour deposition; parasitic conduction; size 1.4 nm; strained Ge; Annealing; Capacitive sensors; Chemical vapor deposition; Etching; Hafnium oxide; Leakage current; MOSFETs; Microelectronics; Substrates; Tin; Germanium (Ge); MOSFET; high mobility; high- $kappa$; strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.903405

Filename

4294065