DocumentCode
1105762
Title
A consistent nonisothermal extension of the Scharfetter—Gummel stable difference approximation
Author
McAndrew, C.C. ; Singhal, K. ; Heasell, E.L.
Author_Institution
University of Waterloo, Waterloo, Ontario, Canada
Volume
6
Issue
9
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
446
Lastpage
447
Abstract
Computer simulation is becoming an increasingly important aspect of device analysis and design, and it is well known that stability of the associated numerical solution procedures is enhanced by use of the Scharfetter-Gummel (SG) approximation. Accurate transport models utilizing carrier temperature as a crucial parameter are emerging, however the SG expression is valid only for isothermal analyses. In this letter, a consistent nonisothermal extension of the SG stable difference approximation is presented. Simplifications of the new expression are shown to agree with previous results.
Keywords
Casting; Current density; Diodes; Electron devices; Electrostatics; Isothermal processes; Numerical simulation; Signal analysis; Silicon; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26187
Filename
1485340
Link To Document