• DocumentCode
    1105762
  • Title

    A consistent nonisothermal extension of the Scharfetter—Gummel stable difference approximation

  • Author

    McAndrew, C.C. ; Singhal, K. ; Heasell, E.L.

  • Author_Institution
    University of Waterloo, Waterloo, Ontario, Canada
  • Volume
    6
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    446
  • Lastpage
    447
  • Abstract
    Computer simulation is becoming an increasingly important aspect of device analysis and design, and it is well known that stability of the associated numerical solution procedures is enhanced by use of the Scharfetter-Gummel (SG) approximation. Accurate transport models utilizing carrier temperature as a crucial parameter are emerging, however the SG expression is valid only for isothermal analyses. In this letter, a consistent nonisothermal extension of the SG stable difference approximation is presented. Simplifications of the new expression are shown to agree with previous results.
  • Keywords
    Casting; Current density; Diodes; Electron devices; Electrostatics; Isothermal processes; Numerical simulation; Signal analysis; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26187
  • Filename
    1485340