• DocumentCode
    1105772
  • Title

    Hot-carrier memory effect in an Al/SiN/SiO2/Si MNOS diode due to electrical stress

  • Author

    Chang, C.Y. ; Tzeng, F.C. ; Chen, C.T. ; Mao, Y.W.

  • Author_Institution
    National Cheng Kung University, Taiwan, China
  • Volume
    6
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    448
  • Lastpage
    449
  • Abstract
    An Al/SiN(70 Å)/SiO2(126 Å)/(p)Si MNOS diode was fabricated by using the LOCOS process. The interface trap densities at SiN-SiO2and at the SiO2-Si interface were measured by a CV method. Successive stresses of biasing at -20 V introduces both trap densities. Memory effect of the flat-band shifts was observed. The electron traps were first produced at the SiN-SiO2interface. In addition, the hole traps were also produced owing to the two-step barrier formation in the insulators. Fowler-Nordheim tunneling may be responsible for the trapping in the oxide. The hole traps can be annealed while the electron traps cannot be.
  • Keywords
    Annealing; Density measurement; Diodes; Electron traps; Hot carrier effects; Hot carriers; Insulation; Silicon compounds; Stress; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26188
  • Filename
    1485341
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105772