DocumentCode :
1105808
Title :
18.5-dB Gain at 18 GHz with a GaAs permeable base transistor
Author :
Bozler, C.O. ; Hollis, M.A. ; Nichols, K.B. ; Rabe, S. ; Vera, A. ; Chen, C.L.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
Volume :
6
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
456
Lastpage :
458
Abstract :
Permeable base transistors have recently been fabricated using organometallic chemical vapor deposition (OMCVD) with a gain of 18.5 dB at 18 GHz. This extrapolates to an 
of 150 GHz which is comparable to the best previous result. Secondary ion mass spectrometry (SIMS) analysis shows that there is a large concentration of undesired impurities in the grating region of these recent devices. It is quite probable that better performance can be achieved in future devices if those impurities can be eliminated.
of 150 GHz which is comparable to the best previous result. Secondary ion mass spectrometry (SIMS) analysis shows that there is a large concentration of undesired impurities in the grating region of these recent devices. It is quite probable that better performance can be achieved in future devices if those impurities can be eliminated.Keywords :
Chemical vapor deposition; Doping profiles; Epitaxial growth; Etching; Gain; Gallium arsenide; Gratings; Impurities; Mass spectroscopy; Tungsten;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26191
Filename :
1485344
Link To Document :
