Title :
A novel numerical model for SOI devices
Author :
Lai, P.T. ; Cheng, Y.C.
Author_Institution :
University of Hong Kong, Hong Kong
fDate :
9/1/1985 12:00:00 AM
Abstract :
The Poisson´s equation governing the potential distribution of semiconductor-on-insulator (SOI) structures is solved by a novel numerical technique. In this efficient method, no grid-points need to be assigned for all the insulator regions such as the surface oxide layer, buried oxide layer, and sapphire layer.
Keywords :
Capacitance; Dielectric devices; Dielectrics and electrical insulation; Helium; Numerical analysis; Numerical models; Poisson equations; Semiconductor devices; Silicon on insulator technology; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26192
