• DocumentCode
    1105825
  • Title

    ISFET interface circuit embedded with noise rejection capability

  • Author

    Chung, W.-Y. ; Yang, C.-H. ; Pijanowska, D.G. ; Krzyskow, A. ; Torbicz, W.

  • Author_Institution
    Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung-li, Taiwan
  • Volume
    40
  • Issue
    18
  • fYear
    2004
  • Firstpage
    1115
  • Lastpage
    1116
  • Abstract
    A new constant-current voltage driver forms a bridge-type floating drain-source follower configuration applicable to the determination of H+ ion concentration. The proposed circuit maintains the ion-selective field effect transistor (ISFET) in an accurate constant drain-source voltage and current situation with good noise rejection capability. Simulation results show accurate response for ISFET applications. The presented electronic circuit can be integrated with a ISFET-based microsystem by standard CMOS technology.
  • Keywords
    CMOS integrated circuits; chemical sensors; integrated circuit modelling; integrated circuit noise; ion sensitive field effect transistors; CMOS technology; H; H+ ion concentration; ISFET interface circuit; ISFET-based microsystem; bridge-type floating drain-source follower; constant-current voltage driver; electronic circuit; ion-selective field effect transistor; noise rejection capability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045388
  • Filename
    1335005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105825