Title :
ISFET interface circuit embedded with noise rejection capability
Author :
Chung, W.-Y. ; Yang, C.-H. ; Pijanowska, D.G. ; Krzyskow, A. ; Torbicz, W.
Author_Institution :
Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung-li, Taiwan
Abstract :
A new constant-current voltage driver forms a bridge-type floating drain-source follower configuration applicable to the determination of H+ ion concentration. The proposed circuit maintains the ion-selective field effect transistor (ISFET) in an accurate constant drain-source voltage and current situation with good noise rejection capability. Simulation results show accurate response for ISFET applications. The presented electronic circuit can be integrated with a ISFET-based microsystem by standard CMOS technology.
Keywords :
CMOS integrated circuits; chemical sensors; integrated circuit modelling; integrated circuit noise; ion sensitive field effect transistors; CMOS technology; H; H+ ion concentration; ISFET interface circuit; ISFET-based microsystem; bridge-type floating drain-source follower; constant-current voltage driver; electronic circuit; ion-selective field effect transistor; noise rejection capability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045388
