A proposed planar junction structure with near-ideal breakdown characteristics

Addition of a low-concentration p-type pocket around the edge region of p⁺-n type planar junction improves the electric-field distribution to such an extent that near-ideal breakdown characteristics can be obtained. This has been observed in 2-dimensional computer simulation studies. This is based on the fact that for a specific combination of width and depth of the pocket, the region in which maximum avalanche multiplication occurs, changes from the edge to the plane. Worst-case analysis taking constant impurity profiles in all the regions and rectangular junctions has been presented to know the influence of the edge region. The present structure, if realized by the methods indicated, would result in the highest breakdown voltage of a planar junction