Title :
Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs
Author :
van der Steen, J.-L.P.J. ; Hueting, R.J.E. ; Smit, G.D.J. ; Hoang, T. ; Holleman, J. ; Schmitz, J.
Author_Institution :
Twente Univ., Enschede
Abstract :
The effect of quantum confinement in thin silicon-on-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the first time. By comparing temperature-dependent subthreshold characteristics of p-type devices with different silicon layer thicknesses, the offset in the valence band edge induced by spatial carrier confinement in these very thin silicon layers was measured electrically. Changes in the band structure are important for future CMOS devices such as FinFETs.
Keywords :
MOSFET; electric current; silicon-on-insulator; valence bands; double-gate MOSFET; p-type devices; quantum confinement; spatial carrier confinement; subthreshold current measurements; temperature-dependent subthreshold characteristics; thin silicon-on-insulator MOSFET; valence band offset measurements; Carrier confinement; Current measurement; Electric variables measurement; FinFETs; MOSFETs; Potential well; Silicon on insulator technology; Subthreshold current; Thickness measurement; Time measurement; Bandgap; MOSFETs; carrier confinement; conduction band; device characterization; silicon-on-insulator (SOI) technology; subthreshold; temperature; valence band;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.903390
