Enhanced device performance by unstrained In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As doped-channel FET on GaAs substrates

Author

Yang, Ming-Ta ; Chan, Yi-Jen ; Shieh, Jia-Lin ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

17

Issue

8

fYear

1996

Firstpage

410

Lastpage

412

Abstract

An alternative In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density. This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.

Keywords

III-V semiconductors; aluminium compounds; carrier density; conduction bands; gallium arsenide; indium compounds; junction gate field effect transistors; GaAs; GaAs substrate; In/sub 0.3/Ga/sub 0.7/As-In/sub 0.29/Al/sub 0.71/As; In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As heterostructure; carrier confinement; carrier density; conduction-band discontinuity; unstrained doped-channel FET; Buffer layers; Carrier confinement; Councils; Degradation; Electron mobility; FETs; Gallium arsenide; HEMTs; MODFETs; Photonic band gap;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.511591

Filename

511591