Title :
Enhanced device performance by unstrained In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As doped-channel FET on GaAs substrates
Author :
Yang, Ming-Ta ; Chan, Yi-Jen ; Shieh, Jia-Lin ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
An alternative In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density. This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; conduction bands; gallium arsenide; indium compounds; junction gate field effect transistors; GaAs; GaAs substrate; In/sub 0.3/Ga/sub 0.7/As-In/sub 0.29/Al/sub 0.71/As; In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As heterostructure; carrier confinement; carrier density; conduction-band discontinuity; unstrained doped-channel FET; Buffer layers; Carrier confinement; Councils; Degradation; Electron mobility; FETs; Gallium arsenide; HEMTs; MODFETs; Photonic band gap;
Journal_Title :
Electron Device Letters, IEEE
