DocumentCode
1105903
Title
Single-pole-four-throw switch using high-aspect-ratio lateral switches
Author
Liu, A.Q. ; Palei, W. ; Tang, M. ; Alphones, A.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Volume
40
Issue
18
fYear
2004
Firstpage
1125
Lastpage
1126
Abstract
A single-pole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported. This simplified SP4T micromachined switch is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer. The measurement results of the SP4T switch show an insertion loss of less than 1 dB and isolation of 30 dB from DC to 6 GHz.
Keywords
S-parameters; elemental semiconductors; micromachining; microswitches; microwave switches; silicon; silicon-on-insulator; sputter etching; 0 to 6 GHz; MEMS; SP4T switch; Si; deep reactive ion etching; insertion loss; isolation; lateral switches; metal-contact micromachined switch; silicon-on-insulator wafer; single pole four throw switch;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20045718
Filename
1335012
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