Title :
Specific contact resistivity of TiSi2to P+and n+junctions
Author :
Hui, J. ; Wong, S. ; Moll, J.
Author_Institution :
Hewlett Packard Laboratories, Palo Alto, CA
fDate :
9/1/1985 12:00:00 AM
Abstract :
Specific contact resistivities of the Al/TiW/TiSi2/Si system are characterized. It is found that without a TiW barrier layer, Al can penetrate through the TiSi2layer and significantly affect the TiSi2/Si interfacial contact resistance. Intrinsic TiSi2contact resistivities to n+and p+silicon are characterized with a TiW barrier between the silicide and the aluminum. TiSi2contact resistivity to n+silicon is found to be about one order of magnitude lower than that of Al to n+silicon. However, TiSi2to p+silicon contact resistivity is higher than that of Al to p+silicon and is very sensitive to the boron implant dose.
Keywords :
Aluminum; Artificial intelligence; Conductivity; Contact resistance; Electrical resistance measurement; Implants; MOS devices; Silicides; Silicon; Titanium;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26199
