Title :
Stable longitudinal-mode InGaAsP/InP internal-reflection-interference laser
Author :
Ohshima, Masaaki ; Toyoda, Yukio ; Hirayama, Noriyuki ; Takenaka, Naoki ; Matsuki, Michio ; Kobayasi, Hiroyuki ; Kino, Yukihiro
Author_Institution :
Opto-Electronics Development Center, Matsushita Electric Industrial Co., Ltd., Kawasaki, Japan
fDate :
6/1/1985 12:00:00 AM
Abstract :
An InGaAsP/InP 1.3 μm, buried-crescent internal-reflection-interference (BC-IRI) laser has been developed. Interference is caused by internal reflections from the two faces of the InP notch built in the n-InGaAsP waveguide channel. In the best diode, threshold current was 25 mA, and the temperature variation of the lasing wavelength was 0.75 Å/°C. Mode hopping was not observed in the temperature range from 15 to 45°C, and stable single-mode operation at an injection level more than four times the threshold current was also confirmed. Furthermore, dynamic single-mode operation was obtained at modulation frequencies up to 1 GHz.
Keywords :
Gallium materials/lasers; Laser modes; Laser resonators; Optical reflection; Diodes; Frequency modulation; Indium phosphide; Interference; Laser modes; Laser stability; Optical reflection; Temperature distribution; Threshold current; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1985.1072730