DocumentCode :
1105969
Title :
Nonalloyed ohmic contacts to n-type GaAs by pulsed ruby laser diffused tin from tin-silica film
Author :
Kalkur, T.S. ; Nassibian, A.G. ; Rose, A.
Author_Institution :
University of Western Australia, Nedlands, Australia
Volume :
6
Issue :
10
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
489
Lastpage :
490
Abstract :
Nonalloyed ohmic contacts were formed on n+diffused layers on GaAs. The n+layers were formed on semi-insulating substrates by depositing a layer of tin-silica film and irradiating by ruby laser alone without thermal diffusion. Vacuum-evaporated AuGe-Ni contacts display low specific contact resistance ≃1.8 × 10-6Ω.cm2, without alloying.
Keywords :
Conductivity; Gallium arsenide; Laser beams; Metallization; Ohmic contacts; Optical pulses; Pulsed laser deposition; Surface emitting lasers; Surface morphology; Tin;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26204
Filename :
1485357
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1105969
بازگشت